 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Pac k aged in t he SOT2 3 -6 out line t his new 5 t h generation low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES * 3.5 Amps continuous current * Extremely low saturation voltage (-70mV max @ 1A/100mA ) * Up to 10 Amps peak current * Very low saturation voltages SOT23-6 APPLICATIONS * DC - DC converters * Battery charging * Power switches * Motor control * Power management functions PINOUT ORDERING INFORMATION DEVICE ZX5 T2 E6 TA ZX5 T2 E6 TC REEL SIZE 7" 13" TAPE WIDTH 8mm embossed 8mm embossed QUANTITY PER REEL 3,000 10,000 DEVICE MARKING * 52 TOP VIEW ISSUE 1 - MAY 2004 1 SEMICONDUCTORS ZX5T2E6 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation at T A = 2 5 C (a) Linear derating factor Power dissipation at T A = 2 5 C Linear derating factor Operating and storage temperature range T j, T stg (b) SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD LIMIT UNIT V V V A A W mW/ C W mW/ C C -25 -20 -7.5 -3.5 -10 1.1 8.8 1.7 13.6 -55 to + 150 THERMAL RESISTANCE PARAMETER Junction to ambient Junction to ambient (b) (a) SYMBOL R JA R JC VALUE 113 73 UNIT C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) As above measured at t< 5 seconds. ISSUE 1 - MAY 2004 SEMICONDUCTORS 2 ZX5T2E6 CHARACTERISTICS ISSUE 1 - MAY 2004 3 SEMICONDUCTORS ZX5T2E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage SYMBOL BV CBO BV CEO BV EBO I CBO I CES I EBO V CE(SAT) -10 -100 -110 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio V BE(SAT) V BE(ON) hFE 300 300 150 10 Transition frequency Output capacitance Switching times fT C OBO t ON t OFF NOTES * Measured under pulsed conditions. Pulse width MIN. -25 -20 -7.5 TYP. -49 -43 -8.4 MAX. UNIT CONDITIONS V V V I C = -1 0 0 A I C = -1 0 mA * I E = -1 0 0 A V CB = -2 0 V V CB = -2 0 V V EB = -6 V I C = -0 . 1 A, I B = -1 0 mA* I C = -1 A, I B = -1 0 mA* IC = -3 .5 A, IB = -3 5 0 mA* IC = -3 .5 A, IB = -3 5 0 mA* I C = -3 . 5 A, V CE = -2 V * I C = -1 0 mA, V CE = -2 V * I C = -1 A, V CE = -2 V * I C = -3 . 5 A, V CE = -2 V * I C = -1 0 A, V CE = -2 V * I C = -5 0 mA, V CE = -1 0 V f = 5 0 MHz pF ns ns V CB = -1 0 V , f = 1 MHz * I C = -2 A, V CC = -1 0 V , I B1 = I B2 = -4 0 mA -100 -100 -100 -15 -140 -130 -1.1 -0.9 nA nA nA mV mV mV V V -0.96 -0.8 575 450 285 40 110 45 90 325 900 300 s; duty cycle 2% . ISSUE 1 - MAY 2004 SEMICONDUCTORS 4 ZX5T2E6 TYPICAL CHARACTERISTICS ISSUE 1 - MAY 2004 5 SEMICONDUCTORS ZX5T2E6 PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS DIM A A1 A2 b C D Millimeters Min 0.90 0.00 0.90 0.20 0.09 2.70 Max 1.45 0.15 1.30 0.50 0.26 3.10 Inches Min 0.035 0.00 0.035 0.008 0.003 0.106 Max 0.057 0.006 0.051 0.020 0.010 0.122 DIM E E1 L e e1 Millimeters Min 2.20 1.30 0.10 Max 3.20 1.80 0.60 Inches Min 0.0866 0.0511 0.004 Max 0.118 0.071 0.024 0.95 REF 1.90 REF 0 30 0.037 REF 0.075 REF 0 30 (c)Zetex Semiconductors plc 2004 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquaters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - MAY 2004 SEMICONDUCTORS 6 # |
Price & Availability of ZX5T2E6
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |